feb.1999 mitsubishi transistor modules QM20KD-HB medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverters, servo drives, dc motor controllers, nc equipment, welders. QM20KD-HB ? i c collector current .......................... 20a ? v cex collector-emitter voltage ........... 600v ? h fe dc current gain............................. 250 ? insulated type ? ul recognized yellow card no. e80276 (n) file no. e80271 kp bup bvp bwp bwn bvn bun a tsr u vw n 42 30 9 18 11 18 15 8 18 93 110 r6 11 11 12.5 10.5 10.5 18.5 (24.45) (23.6) bwp w bwn bvp bvn v u bup bun p k r s a t n 15 6.5 2 f 5.5 label tab#110, t=0.5 tab#250, t=0.8
feb.1999 min. 250 symbol i cex i cbo i ebo v ce (sat) v be (sat) Cv ceo h fe t on t s t f r th (j-c) q r th (j-c) r r th (c-f) test conditions v ce =600v, v eb =2v v cb =600v, emitter open v eb =7v i c =20a, i b =80ma Ci c =20a (diode forward voltage) i c =20a, v ce =2v v cc =300v, i c =20a, i b1 =120ma,Ci b2 =0.4a transistor part (per 1/6 module) diode part (per 1/6 module) conductive grease applied parameter collector cutoff current collector cutoff current emitter cutoff current collector-emitter saturation voltage base-emitter saturation voltage collector-emitter reverse voltage dc current gain switching time thermal resistance (junction to case) contact thermal resistance (case to fin) conditions charged part to case, ac for 1 minute mounting screw m5 typical value mitsubishi transistor modules QM20KD-HB medium power switching use insulated type absolute maximum ratings (inverter part, t j =25 c) symbol v cex (sus) v cex v cbo v ebo i c Ci c p c i b Ci csm parameter collector-emitter voltage collector-emitter voltage collector-base voltage emitter-base voltage collector current collector reverse current collector dissipation base current surge collector reverse current (forward diode current) conditions i c =1a, v eb =2v v eb =2v emitter open collector open dc dc (forward diode current) t c =25 c dc peak value of one cycle of 60hz (half wave) ratings 600 600 600 7 20 20 83 1 200 unit v v v v a a w a a absolute maximum ratings (converter part, t j =25 c) symbol v rrm v rsm e a i o i fsm i 2 t parameter repetitive peak reverse voltage non-repetitive peak reverse voltage recommended ac input voltage dc output current surge (non-repetitive) forward current i 2 t for fusing conditions three phase full wave rectifying circuit, t c =79 c one half cycle at 60 hz, peak value value for one cycle of surge current ratings 800 900 220 30 300 375 unit v v v a a a 2 s absolute maximum ratings (common) symbol t j t stg v iso parameter junction temperature storage temperature isolation voltage mounting torque weight ratings C40~150 C40~125 2500 1.47~1.96 15~20 125 unit c c v nm kgcm g unit ma ma ma v v v m s m s m s c/w c/w c/w limits typ. max. 1.0 1.0 40 2.0 2.5 1.5 1.5 12 2.0 1.5 2.5 0.35 electrical characteristics (inverter part, t j =25 c) parameter repetitive peak reverse current forward voltage thermal resistance contact thermal resistance test conditions v r =v rrm , t j =150 c i f =30a junction to case case to fin, conductive grease applied electrical characteristics (converter part, t j =25 c) symbol i rrm v fm r th (j-c) r th (c-f) unit ma v c/w c/w limits max. 5.0 1.3 0.9 0.35 min. typ.
feb.1999 performance curves common emitter output characteristics (typical) common emitter input characteristic (typical) saturation voltage characteristics (typical) collector-emitter saturation voltage (typical) switching time vs. collector current (typical) dc current gain vs. collector current (typical) collector current i c (a) dc current gain h fe collector-emitter voltage v ce (v) collector current i c (a) base current i b (a) collector-emitter saturation voltage v ce (sat) (v) saturation voltage v ce (sat) , v be (sat) (v) switching time t on , t s , t f ( m s) collector current i c (a) base-emitter voltage v be (v) base current i b (a) collector current i c (a) mitsubishi transistor modules QM20KD-HB medium power switching use insulated type ? 10 0 10 7 5 4 3 2 ? 10 7 5 4 3 2 1.0 1.4 1.8 2.2 2.6 3.0 v ce =2.0v t j =25? 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 2 34 57 2 10 v be(sat) v ce(sat) t j =25? t j =125? i b =80ma 50 40 30 20 10 0 01 23 4 5 t j =25? i b =20ma i b =40ma i b =80ma i b =200ma i b =400ma 3 10 7 5 4 3 2 2 10 7 5 4 3 2 0 10 23457 1 10 23457 2 10 2 v ce =2.0v v ce =5.0v t j =25? t j =125? 0 10 ? 10 7 5 4 3 2 0 1 2 3 4 5 7 5 4 3 ? 10 2 t j =25? t j =125? i c =15a i c =20a i c =25a 1 10 7 5 4 3 2 0 10 7 5 4 3 0 10 23457 1 10 23457 2 10 3 2 i b1 =120ma v cc =300v t s t on t f i b2 =?00ma t j =25? t j =125?
feb.1999 switching time vs. base current (typical) reverse bias safe operating area switching time t s , t f ( m s) collector-emitter voltage v ce (v) base reverse current Ci b2 (a) forward bias safe operating area derating factor of f. b. s. o. a. collector-emitter voltage v ce (v) case temperature t c ( c) reverse collector current vs. collector-emitter reverse voltage (diode forward characteristics) (typical) transient thermal impedance characteristic (transistor) collector-emitter reverse voltage Cv ceo (v) time (s) collector current i c (a) collector current i c (a) derating factor (%) collector reverse current Ci c (a) mitsubishi transistor modules QM20KD-HB medium power switching use insulated type z th (jCc) ( c/ w) 0 10 1 10 ? 10 ? 10 0 10 ? 10 2 10 1 10 0 10 0 10 1 10 2 10 3 10 ? 10 100 80 60 40 20 0 0 20 60 100 120 160 40 80 140 10 30 50 70 90 1 10 7 5 4 3 2 0 10 7 5 4 3 3457 0 10 23 2 ? 10 2 3 45 7 1 10 t s t j =25? t j =125? i b1 =120ma v cc =300v i c =20a t f 50 0 0 800 600 200 30 40 20 10 400 700 500 100 300 t j =125? i b2 =?.5a i b2 =?a 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 7 5 3 2 200? 5ms dc 100? 50? 10ms 1ms t c =25? 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0.4 0.8 1.2 1.6 2.0 2.4 t j =25? t j =125? 7 5 3 2 7 5 3 2 7 5 3 2 2.0 0 7 5 3 2 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 t c =25? non-pepetitive collector dissipation second breakdown area
feb.1999 i rr (a), q rr ( m c) surge collector reverse current Ci csm (a) t rr ( m s) transient thermal impedance characteristic (diode) rated surge collector reverse current (diode forward surge current) reverse recovery characteristics of free-wheel diode (typical) conduction time (cycles at 60hz) forward current i f (a) time (s) z th (jCc) ( c/ w) mitsubishi transistor modules QM20KD-HB medium power switching use insulated type 0 10 1 10 ? 10 ? 10 ? 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 40 80 120 160 200 60 100 140 180 20 7 5 3 2 7 5 3 2 7 5 3 2 2.0 0 7 5 3 2 0.8 0.4 1.2 1.6 2.4 2.8 3.2 1 10 7 5 4 3 2 0 10 7 5 4 3 2 ? 10 0 10 23457 1 10 23457 2 10 2 10 1 10 0 10 i rr q rr t rr v cc =300v i b1 =120ma i b2 =?00ma t j =25? t j =125?
feb.1999 power dissipation p (w) maximum power dissipation allowable case temperature vs. dc output current dc output current i o (a) dc output current i o (a) mitsubishi transistor modules QM20KD-HB medium power switching use insulated type maximum forward characteristic forward current i f (a) forward voltage v f (v) performance curves (converter parts) surge (non-repetitive) foward current i fsm (a) allowable surge (non-repetitive) forward current conduction time (cycles at 60h z ) case temperature t c ( c) 3 10 2 10 1 10 0 10 2 10 1 10 7 5 4 3 2 0 10 7 5 4 3 2 0 100 200 300 400 500 7 5 3 2 7 5 3 2 7 5 3 2 0.8 1.2 1.6 2.0 2.4 t j =25? 100 80 60 40 20 0 0 8 16 24 32 40 160 140 120 100 80 60 0 8 16 24 32 40 resistive, inductive load resistive, inductive load
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